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Kevin O'Donnell
Professor of Semiconductor Spectroscopy

Kevin O'Donnell

Kevin studied for his BSc at Glasgow University and completed his PhD at Trinity College Dublin in 1978 under Brian Henderson. He carried out postdoctoral research with Gordon Davies at Kings College London and with George Watkins at Lehigh University. Before returning to Scotland, he worked as Lecturer in Physical Sciences at Dublin City University. He came to Strathclyde in 1986 and became a Professor in the Physics Department in 1998.

| e: k.p.odonnell at strath.ac.uk | t: 0141 548 3365 | u: http://ssd.phys.strath.ac.uk/ |

Research

Kevin O’Donnell is Professor of Semiconductor Spectroscopy and Head of the Nanoscience Division. He has 25 years’ experience of semiconductor and other condensed matter spectroscopies, having worked on a wide range of materials: alkaline earth oxides and beta-alumina, diamond, II-VI compounds, silicon, silicon carbide, gallium phosphide and, since 1995, the III-Nitrides and their alloys. He has co-authored 250 publications. Recent guiding interests have included the link between exciton localisation and luminescence in disordered semiconductors, the use of large facilities in semiconductor physics and the development of techniques for chemical imaging of nanoluminescent semiconductor materials and devices.

Highlights

Co-chair of 2005 International Conference on PLMCN5; International Program Committees for eMRS 2005, 2007 (Strasbourg) and PLMCN6 (Magdeburg) 2006

Invited talks include International Indium Nitride workshop, Freemantle, 2003, Fall Materials Research Society Symposium, Boston 2005

Coordinator of EU FP5 network RENiBEl 2002-2005

Selected publications

V.Kachkanov, I.P.Dolbnya, K.P.O'Donnell, R.W.Martin, P.R.Edwards, S.Pereira, "InGaN epilayer characterization by microfocused x-ray reciprocal space mapping", Appl. Phys. Express 99, 181909 (2011) doi: 10.1063/1.3658619

I.S.Roqan, K.P.O'Donnell, R.W.Martin, P.R.Edwards, S.F.Song, A.Vantomme, K.Lorenz, E.Alves, M.Boćkowski, "Identification of the prime optical center in GaN:Eu3+", Phys. Rev. B 81, 085209 (2010) doi: 10.1103/PhysRevB.81.085209

K.Wang, K.P.O'Donnell, B.Hourahine, R.W.Martin, I.M.Watson, K.Lorenz, E.Alves, "Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range", Phys. Rev. B 80, 125206 (2009) doi: 10.1103/PhysRevB.80.125206

K.Lorenz, I.S.Roqan, N.Franco, K.P.O'Donnell, V.Darakchieva, E.Alves, C.Trager-Cowan, R.W.Martin, D.J.As, M.Panfilova, "Europium doping of zincblende GaN by ion implantation", J. Appl. Phys. 105, 113507 (2009) doi: 10.1063/1.3138806

K.Wang, R.W.Martin, D.Amabile, P.R.Edwards, S.Hernandez, E.Nogales, K.P.O'Donnell, K.Lorenz, E.Alves, V.Matias, A.Vantomme, D.Wolverson, I.M.Watson, "Optical energies of AlInN epilayers", J. Appl. Phys. 103, 073510 (2008) doi: 10.1063/1.2898533

S.M.D.Pereira, K.P.O'Donnell, E.J.D.Alves, "Role of nanoscale strain inhomogeneity on the light emission from InGaN epilayers", Adv. Funct. Mater. 17, 37-42 (2007) doi: 10.1002/adfm.200600650

E.Nogales, R.W.Martin, K.P.O'Donnell, K.Lorenz, E.Alves, S.Ruffenach, O.Briot, "Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing", Appl. Phys. Lett. 88, 031902 (2006) doi: 10.1063/1.2162797

K.Wang, R.W.Martin, E.Nogales, P.R.Edwards, K.P.O'Donnell, K.Lorenz, E.Alves, I.M.Watson, "Cathodoluminescence of rare earth implanted AlInN", Appl. Phys. Lett. 89, 131912 (2006) doi: 10.1063/1.2357343

K.Wang, R.W.Martin, K.P.O'Donnell, V.Katchkanov, E.Nogales, K.Lorenz, E.Alves, S.Ruffenach, O.Briot, "Selectively excited photoluminescence from Eu-implanted GaN", Appl. Phys. Lett. 87, 112107 (2005) doi: 10.1063/1.2045551

K.Lorenz, U.Wahl, E.Alves, S.Dalmasso, R.W.Martin, K.P.O'Donnell, S.Ruffenach, O.Briot, "High-temperature annealing and optical activation of Eu-implanted GaN", Appl. Phys. Lett. 85, 2712-2714 (2004) doi: 10.1063/1.1801686

S.Pereira, M.R.Correia, E.Pereira, K.P.O'Donnell, E.Alves, A.D.Sequeira, N.Franco, I.M.Watson, C.J.Deatcher, "Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping", Appl. Phys. Lett. 80, 3913-3915 (2002) doi: 10.1063/1.1481786

C.Trager-Cowan, F.Sweeney, J.Hastie, S.K.Manson-Smith, D.A.Cowan, D.McColl, A.Mohammed, K.P.O'Donnell, D.Zubia, S.D.Hersee, C.T.Foxon, I.Harrison, S.V.Novikov, "Characterization of nitride thin films by electron backscatter diffraction", J. Microsc. 205, 226-230 (2002) doi: 10.1046/j.1365-2818.2002.00996.x

Current Grants

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