[Postgrad] Growth and Fabrication Issues for III-N Based Materials and Devices, SUPA Seminar, 2 pm Monday 17th February, by Peter Parbrook

[Carol Trager-Cowan]

Dear All,

You are all very welcome to our:

SUPA Distinguished Visitor Seminar: Growth and Fabrication Issues for III-N Based Materials and Devices
by Peter J Parbrook, Tyndall National Institute, University College Cork.
TIME : 2 pm, Monday 17th February
VENUE: SUPA Grid Room, JA8.13 John Anderson Building

Abstract:
III-N materials are extensively used in the manufacture of visible (blue-green) light emitting diodes and for the production of white light.  They are also used in the manufacture of transistors, especially for high frequency applications.  However, there are many challenges to their production: natural III-N substrates are expensive and difficult to obtain, the material is sensitive to the growth condition and also has a high density of defects within it.  Further alloy formation is not trivial, especially to narrow the bandgap from GaN (or AlN) using indium, and there are also challenges with doping the material p-type.
The practical challenges involved in preparing gallium nitride and related devices will be discussed in this presentation, along with a description of some of the strategies to mitigate those difficulties.  This will concentrate on the growth issues by metalorganic vapour phase epitaxy in particular, but will also extend to look at issues within device design, and fabrication.

Please contact me if you would like any more information.

Regards,

Carol

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Carol Trager-Cowan,
Department of Physics,
University of Strathclyde,
John Anderson Building,
Glasgow, UK,
G4 0NG
tel: 0141-548 3465
fax: 0141-5522891
e-mail: c.trager-cowan at strath.ac.uk
http://ssd.phys.strath.ac.uk
The Department is a partner in SUPA, the Scottish Universities Physics Alliance

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