[Postgrad] Seminar on III-N semiconductors: Thurs 3rd July, 11am, JA8.13

[Robert Martin]

Dear All,

One of our Visiting Professors, Ian Ferguson of the University of North 
Carolina at Charlotte, is visiting on Thursday 3rd July and will present 
a seminar at 11am in JA8.13. All are welcome to attend. Please pass this 
message on to others who might be interested. Further details are below.

Regards,

Rob

_Colloquium_

**

*Wide Band Gap III-Nitrides:*

*The Universal Compound Semiconductor Solution*

*/"An 'Annie get your GaN' experience"/*

Ian Ferguson^

Dept. of Electrical and Computer Engineering

University of North Carolina at Charlotte

Charlotte, NC 28223

ianf at uncc.edu <mailto:ianf at uncc.edu>

*Thursday 3^rd July*

*/John Anderson 8.13 (SUPA Grid Room)/*

*/All Welcome/*

/^/

The ternary group III-Nitrides have demonstrated great promise in 
becoming the universal III-V compound semiconductor material for 
electronic, optoelectronic and other applications.This talk will show 
that the III-Nitrides can provide a possible solution for many 
applications that traditionally used various III-V materials and 
associated devices.The development of wide-band gap compound 
semiconductors materials and devices, in particular the III-Nitrides, 
are leading a revolution in energy related areas of light emitting 
diodes (LEDs), solar cells and thermoelectric applications, and in other 
diverse applications such as UV detection, spintronics and more recently 
neutron detection.However, a sound understanding of the appropriate 
material properties of III-Nitride for these diverse applications is 
needed as well as the understanding the compromises that are needed in 
the corresponding device structures.For example, the use of LEDs in 
general illumination, known as solid state lighting, incorporate InGaN 
in such a way that it shows large compositional fluctuations in the 
active region of the device.This physical phenomenon has been associated 
with bright emission from these devices despite the high defect density 
in the material.Moreover, these first generation devices typically have 
poor color rendering capability, in addition to poor correlated color 
temperature associated with gaps in the power spectrum.The group 
III-Nitride technology is also the basis for the development of a new 
generation of highly efficient solar cells. Wide-band gap InGaN is one 
of the few materials that can provide bandgaps in the 2.4-2.9 eV range 
for multi-junction photovoltaics devices to achieve efficiencies greater 
than 50%.Single phase InGaN with indium compositions up to 30% (2.5 eV 
band gap) are needed for these applications including understanding 
their absorption characteristics and ability to p-type dope.Another 
emerging application for the group III-Nitrides is high temperature 
(>700^o C) thermoelectric applications for waste heat harvesting.Recent 
measurements of the thermoelectric properties of InGaN; including the 
Seebeck coefficient, the electrical conductivity, and the power factor, 
etc., show promising results for this application.However, the effects 
of point and extended defects on thermoelectric properties, in 
particularly the Seebeck coefficient, are not well understood and need 
further investigation.


*Ian T. Ferguson: Biography (June 2014)*

Dr. Ferguson is a currently a Professor and the Chair of Electrical and 
Computer Engineering at the University of North Carolina at 
Charlotte.From August 2014 he will be the Vice Provost and Dean of 
Engineering and Computing at Missouri University of Science and 
Technology.He is a Fellow of Institute of Electrical and Electronic 
Engineering, the Institute of Physics, and the International Society for 
Optical Engineering.His current research currently focuses on the area 
of wide bandgap materials and devices using GaN and ZnO, and developing 
them for illumination, solar, spintronic and nuclear detection 
applications.Dr. Ferguson has authored over 450 refereed publications 
(h-Index 33), seven book chapters, eleven conference proceedings, one 
book and multiple patents.He has have given over 330 invited and 
contributed talks and seminars throughout the US, Europe and Asia.Dr. 
Ferguson co-founded and is the Chairman of the Board for PiES, Project 
for innovation, Energy and Sustainability, a non-profit green business 
incubator.He was selected by the /Charlotte Business Journal/ for 
'General Excellence in Sustainable Leadership' in the 2011 Sustainable 
Business Awards for this work.


===============================================================
Professor Robert Martin,
Head of Department,
Department of Physics, University of Strathclyde, John Anderson 
Building, Glasgow, UK, G4 0NG

tel: 0141-548-3132 (secretary) / 3466 (direct)
fax: 0141-552-2891
e-mail: r.w.martin at strath.ac.uk <mailto:r.w.martin at strath.ac.uk>

The Department is a partner in SUPA, the Scottish Universities Physics 
Alliance
The University of Strathclyde is a charitable body, registered in 
Scotland, number SC015263

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