[Postgrad] Seminar on III-N semiconductors: Thurs 3rd July, 11am, JA8.13

Thu Jul 3 10:00:37 BST 2014

Reminder: seminar this morning - 11am in JA8.13

On 30/06/2014 16:46, Robert Martin wrote:
> Dear All,
>
> One of our Visiting Professors, Ian Ferguson of the University of 
> North Carolina at Charlotte, is visiting on Thursday 3rd July and will 
> present a seminar at 11am in JA8.13. All are welcome to attend. Please 
> pass this message on to others who might be interested. Further 
> details are below.
>
> Regards,
>
> Rob
>
> _Colloquium_
>
> **
>
> *Wide Band Gap III-Nitrides:*
>
> *The Universal Compound Semiconductor Solution*
>
> */"An 'Annie get your GaN' experience"/*
>
> Ian Ferguson^
>
> Dept. of Electrical and Computer Engineering
>
> University of North Carolina at Charlotte
>
> Charlotte, NC 28223
>
> ianf at uncc.edu <mailto:ianf at uncc.edu>
>
> *11am Thursday 3^rd July*
>
> */John Anderson 8.13 (SUPA Grid Room)/*
>
> */All Welcome/*
>
> /^/
>
> The ternary group III-Nitrides have demonstrated great promise in 
> becoming the universal III-V compound semiconductor material for 
> electronic, optoelectronic and other applications.This talk will show 
> that the III-Nitrides can provide a possible solution for many 
> applications that traditionally used various III-V materials and 
> associated devices.The development of wide-band gap compound 
> semiconductors materials and devices, in particular the III-Nitrides, 
> are leading a revolution in energy related areas of light emitting 
> diodes (LEDs), solar cells and thermoelectric applications, and in 
> other diverse applications such as UV detection, spintronics and more 
> recently neutron detection.However, a sound understanding of the 
> appropriate material properties of III-Nitride for these diverse 
> applications is needed as well as the understanding the compromises 
> that are needed in the corresponding device structures.For example, 
> the use of LEDs in general illumination, known as solid state 
> lighting, incorporate InGaN in such a way that it shows large 
> compositional fluctuations in the active region of the device.This 
> physical phenomenon has been associated with bright emission from 
> these devices despite the high defect density in the 
> material.Moreover, these first generation devices typically have poor 
> color rendering capability, in addition to poor correlated color 
> temperature associated with gaps in the power spectrum.The group 
> III-Nitride technology is also the basis for the development of a new 
> generation of highly efficient solar cells. Wide-band gap InGaN is one 
> of the few materials that can provide bandgaps in the 2.4-2.9 eV range 
> for multi-junction photovoltaics devices to achieve efficiencies 
> greater than 50%.Single phase InGaN with indium compositions up to 30% 
> (2.5 eV band gap) are needed for these applications including 
> understanding their absorption characteristics and ability to p-type 
> dope.Another emerging application for the group III-Nitrides is high 
> temperature (>700^o C) thermoelectric applications for waste heat 
> harvesting.Recent measurements of the thermoelectric properties of 
> InGaN; including the Seebeck coefficient, the electrical conductivity, 
> and the power factor, etc., show promising results for this 
> application.However, the effects of point and extended defects on 
> thermoelectric properties, in particularly the Seebeck coefficient, 
> are not well understood and need further investigation.
>
>
> *Ian T. Ferguson: Biography (June 2014)*
>
> Dr. Ferguson is a currently a Professor and the Chair of Electrical 
> and Computer Engineering at the University of North Carolina at 
> Charlotte.From August 2014 he will be the Vice Provost and Dean of 
> Engineering and Computing at Missouri University of Science and 
> Technology.He is a Fellow of Institute of Electrical and Electronic 
> Engineering, the Institute of Physics, and the International Society 
> for Optical Engineering.His current research currently focuses on the 
> area of wide bandgap materials and devices using GaN and ZnO, and 
> developing them for illumination, solar, spintronic and nuclear 
> detection applications.Dr. Ferguson has authored over 450 refereed 
> publications (h-Index 33), seven book chapters, eleven conference 
> proceedings, one book and multiple patents.He has have given over 330 
> invited and contributed talks and seminars throughout the US, Europe 
> and Asia.Dr. Ferguson co-founded and is the Chairman of the Board for 
> PiES, Project for innovation, Energy and Sustainability, a non-profit 
> green business incubator.He was selected by the /Charlotte Business 
> Journal/ for 'General Excellence in Sustainable Leadership' in the 
> 2011 Sustainable Business Awards for this work.
>
>
> ===============================================================
> Professor Robert Martin,
> Head of Department,
> Department of Physics, University of Strathclyde, John Anderson 
> Building, Glasgow, UK, G4 0NG
>
> tel: 0141-548-3132 (secretary) / 3466 (direct)
> fax: 0141-552-2891
> e-mail: r.w.martin at strath.ac.uk <mailto:r.w.martin at strath.ac.uk>
>
> The Department is a partner in SUPA, the Scottish Universities Physics 
> Alliance
> The University of Strathclyde is a charitable body, registered in 
> Scotland, number SC015263
>

===============================================================
Professor Robert Martin,
Head of Department,
Department of Physics, University of Strathclyde, John Anderson 
Building, Glasgow, UK, G4 0NG

tel: 0141-548-3132 (secretary) / 3466 (direct)
fax: 0141-552-2891
e-mail: r.w.martin at strath.ac.uk <mailto:r.w.martin at strath.ac.uk>

The Department is a partner in SUPA, the Scottish Universities Physics 
Alliance
The University of Strathclyde is a charitable body, registered in 
Scotland, number SC015263

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